so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 BAT74S features low forward voltage guard ring protected small smd package. absolute maximum ratings ta = 25 parameter symbol conditions min max unit continuous reverse voltage v r 30 v continuous forward current i f 200 ma repetitive peak forward current i frm t p 1s;? 0.5 300 ma non-repetitive peak forward current i fsm t p < 10 ms 600 ma storage temperature t stg -65 +150 junction temperature t j 125 operating ambient temperature t amb -65 +125 continuous reverse voltage v r 30 v continuous reverse voltage v r series connection 60 v continuous forward current i f 110 (1) ma repetitive peak forward current i frm t p 1s;? 0.5 200 ma thermal resistance from junction to ambient r th j-a 416 k/w note 1. if both diodes are in forward operation at the same moment, total device current is max. 110 ma. if one diode is in reverse and the other in forward operation at the same moment, total device current is max. 200 ma. per diode double diode operation product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol conditions max unit i f = 0.1 ma 200 i f = 1 ma 260 i f = 10 ma 340 i f = 30 ma 420 i f = 100 ma 750 reverse current i r v r =25v;note1 2 a when switched from i f =10matoi r =10ma; r l = 100 ;measured at i r =1ma diode capacitance c d f=1mhz;v r =1v 10 pf note 1. pulse test: tp = 300 s; ? = 0.02. mv forward voltage v f reverse recovery time t rr 5ns marking marking 74 BAT74S product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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